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ADVANCE INFORMATION
ZXMC3A17DN8
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown
V (BR)DSS
-30
V
I D = -250 A, V GS =0V
Voltage
Zero Gate Voltage Drain
I DSS
-1.0
A
V DS = -30V, V GS =0V
Current
Gate-Body Leakage
Gate-Source Threshold
I GSS
V GS(th)
-1.0
100
nA
V
V GS =±20V, V DS =0V
I D = -250 A, V DS =V GS
Voltage
Static Drain-Source
On-State Resistance (1)
R DS(on)
0.070
0.110
V GS = -10V, I D = -3.2A
V GS = -4.5V, I D = -2.5A
Forward
Transconductance (1) (3)
g fs
6.4
S
V DS = -15V, I D = -3.2A
DYNAMIC (3)
Input Capacitance
C iss
630
pF
Output Capacitance
Reverse Transfer
Capacitance
C oss
C rss
113
78
pF
pF
V DS = -15V, V GS =0V
f=1MHz
SWITCHING (2) (3)
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
t d(on)
t r
t d(off)
t f
Q g
1.7
2.9
29.2
8.7
8.3
ns
ns
ns
ns
nC
V DD = -15V, I D = -1A
R G ? 6.0 ,
V GS = -10V
V DS = -15V, V GS = -5V
I D = -3.2A
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
Q g
Q gs
Q gd
15.8
1.8
2.8
nC
nC
nC
V DS = -15V, V GS =
-10V
I D = -3.2A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
-0.85
-0.95
V
T j =25°C, I S = -2.5A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t rr
Q rr
19.5
16.3
ns
nC
T j =25°C, I S = -1.7A,
di/dt=100A/ s
NOTES:
(1)
Measured under pulsed conditions. Pulse width
300ms; Duty cycle
2%.
(2)
(3)
Switching characteristics are independent of operating junction temperature.
For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
5
SEMICONDUCTORS
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